Power MOSFET
MTB1306
Preferred Device
Power MOSFET 75 Amps, 30 Volts, Logic Level
N−Channel D2PAK
This Power MOSFET is designed to ...
Description
MTB1306
Preferred Device
Power MOSFET 75 Amps, 30 Volts, Logic Level
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured − Not Sheared Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
VDSS VDGR
VGS VGSM
ID ID IDM PD
30 Vdc 30 Vdc
± 20 Vdc ± 20 Vpk
75 Adc 59 225 Apk 150 Watts 1.2 W/°C 2.5 Watts
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Single Pulse Drain−to−Source Av...
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