K2958

2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 5.5mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK D G S ADE-208-568B (Z) 3rd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 75 300 75 100 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current I GSS Gate to source cutoff voltage VGS(off) Static drain to source on state resistance RDS(on) 30 ±20 — — 1.0 — Static drain to source on state resistance RDS(on) — Forward transfer admittance Input capacitance |yfs| Ciss 35 — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time t d(on) tr t d(off) tf VDF t rr — — — — — — Note: 3. Pulse test Typ Max Unit Test Conditions ——V ID = 10mA, VG...