Document
Ordering number : ENA2206
MCH6353
P-Channel Power MOSFET
-12V, -6.0A, 35mΩ, Single MCPH6
http://onsemi.com
Features
• On-resistance RDS(on)1=29mΩ(typ.) • Halogen free compliance
• 1.5V drive • Protection diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm)
Storage Temperature
Tstg
Ratings -12 ±10 -6.0 -24 1.4 150
- 55 to +150
Unit V V A A W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7022A-009
2.0 654
MCH6353-TL-W
0.15
0 to 0.02
1 23 0.65 0.3
Ordering & Package Information
Device
Package
Shipping
MCH6353-TL-W
MCPH6 SC-88,SC-70-6,
SOT-363
3,000 pcs. / reel
note
Pb-Free and
Halogen Free
LOT No. LOT No.
Packing Type: TL
TL
Marking NC
2.1 0.07 0.85 0.25 1.6 0.25
123 654
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
MCPH6
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013 July, 2013
72413 TKIM TC-00002993 No.A2206-1/6
Electrical Characteristics at Ta = 25°C
MCH6353
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-3A ID=-3A, VGS=-4.5V ID=-1.5A, VGS=-2.5V ID=-0.5A, VGS=-1.8V ID=-0.5A, VGS=-1.5V
VDS=-6V, f=1MHz
See specified Test Circuit.
VDS=-6V, VGS=-4.5V, ID=-6A
IS=-6A, VGS=0V
Switching Time Test Circuit
min -12
Ratings typ
-0.4 11 29 38 52 70
1250 160 150 8.4 48 165 68 12 1.7 2.1 -0.9
max -1 ±1
-1.4 35 48 78
140
-1.2
Unit
V μA μA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
No.A2206-2/6
MCH6353
No.A2206-3/6
MCH6353
No.A2206-4/6
Outline Drawing
MCH6353-TL-W
MCH6353
Land Pattern Example
Mass (g) Unit
0.008
* For reference
mm
0.4
Unit: mm
2.1 0.6
0.65 0.65
No.A2206-5/6
MCH6353
Note on usage : Since the MCH6353 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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