FSS264

Ordering number : ENA0267 FSS264 FSS264 Features Low ON-resistance. 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) PW≤10s Ratings 100 ±20 4 5 16 2.4 150 --55 to +150 Unit V V A A A W °C °C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : S264 V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=2A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit min 100 1.2 3.0 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 5.5 S 65 85 mΩ 80 112 mΩ 1560 pF 130 pF 83 pF 16 ns 25 ns 155 ns 66 ns Cont...