IRF830

IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On−Losses, Specified at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source−to−Drain Diode Characterized for Use with Inductive Loads MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage Drain Current Continuous, TC = 25°C Continuous, TC = 100°C Peak, TC = 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction−to−Case — Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 Seconds Symbol VDSS VDGR VGS ID PD TJ, Tstg Value 500 500 "20 4.5 3.0 18 75 0.6 −55 to 150 Unit Vdc Vdc Vdc Adc Watts W/°C °C RθJC RθJA TL °C/W 1.67 62.5 300 °C http://onsemi.com TMOS POWER FET 4.5 AMPERES, 500 VOLTS RDS(on) = 1.5 Ω N−Channel D ®G S 4 12 3 TO−220AB CASE 221A STYLE 5 PIN ASSIGNMENT 1 Gate 2 Drain 3 Source 4 Drain See the MTM4N45 Data Sheet for a complete set of design curves for the product on this data sheet. Design curves of the MTP4N45 are applicable for this product. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 ORDERING INFORMATION Device Pac...