Effect Transistor. MTP6N60E Datasheet

MTP6N60E Transistor. Datasheet pdf. Equivalent

MTP6N60E Datasheet
Recommendation MTP6N60E Datasheet
Part MTP6N60E
Description Power Field Effect Transistor
Feature MTP6N60E; MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOS.
Manufacture ON Semiconductor
Datasheet
Download MTP6N60E Datasheet




ON Semiconductor MTP6N60E
MTP6N60E
Power Field Effect
Transistor
NChannel EnhancementMode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
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TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO220AB
CASE 221A09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1
Publication Order Number:
MTP6N60E/D



ON Semiconductor MTP6N60E
MTP6N60E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous
Continuous @ 100°C
Single Pulse (tp 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
600 Vdc
600 Vdc
± 20 Vdc
± 40 Vpk
6.0 Adc
4.6
18 Apk
125 Watts
1.0 W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 Ω)
EAS mJ
405
Thermal Resistance Junction to Case°
Junction to Ambient°
RθJC
RθJA
1.0 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2



ON Semiconductor MTP6N60E
MTP6N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
689
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
μAdc
− − 1.0
− − 50
− − 100 nAdc
2.0 3.0 4.0 Vdc
7.1 mV/°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
0.94 1.2 Ohms
Vdc
6.0 8.6
− − 7.6
2.0 5.5
mhos
1498
2100
pF
158 220
29 60
14 30 ns
19 40
40 80
26 55
35.5 50 nC
8.1
14.1
15.8
Vdc
0.83 1.2
0.72
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
266
ns
166
100
2.5 μC
nH
3.5
4.5
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
nH
7.5
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