MTP6N60E
Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced...
MTP6N60E
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET 6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO−220AB CASE 221A−09
Style 5
D
G S
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 7
1
Publication Order Number: MTP6N60E/D
MTP6N60E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous − Continuous @ 100°C − Single ...