N-Channel MOSFET
Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast sw...
Description
Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
Application Switching
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1L080SN
Taping TR 1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2 Tch Tstg
60 20 8.0 32 1.6 32 2.0 150 55to150
*1 Pw≤10s, Duty cycle≤1%
*2 Mounted on a ceramic board
Unit V V A A A A W C C
Inner circuit
(6) (5) (4)
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗2 ∗1
(1) (2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Thermal resistance Parameter
Channel to Ambient
* Mounted on a ceramic board
Symbol Rth (ch-a)*
Limits 62.5
Unit C / W
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1/6
2011.08 - Rev.A
RP1L080SN
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state resistance
RDS
*
(on)
Forward transfer admittance Input capacitance Output capacitan...
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