Document
AON6542
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
30V 30A < 5mΩ < 8.5mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentG
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 30 23 120 23 18 32 26 36 25 10 4.1 2.6
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 3.5
Max 30 64 5
D
S
Units V V A
A A mJ V W W °C
Units °C/W °C/W °C/W
Rev 0: May 2012
www.aosmd.com
Page 1 of 6
AON6542
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1 µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250µA
1.2 1.8 2.2
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
4.1 5 5.6 6.8
mΩ
VGS=4.5V, ID=20A
6.7 8.5 mΩ
gFS Forward Transconductance
VDS=5V, ID=20A
91 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
951 373 62 0.7 1.5 2.3
pF pF pF Ω
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
15.7 7.5 2.8 3.2 6.25 2.5 18.5
4
10.2 13.6
22.5 10.5
nC nC nC nC ns ns ns ns
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: May 2012
www.aosmd.com
Page 2 of 6
AON6542
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V
80
60
4.5V 7V 5V
4V
100 80 60
VDS=5V
ID(A)
ID (A)
40
20 VGS=3.0V
0 01234 VDS (Volts) Fig 1: On-Region Characteristics (Note E)
5
10 8 VGS=4.5V
6
4
VGS=10V 2
0
0 5 10 15 20 25 30 ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
Normalized On-Resistance
40
125°C 20
25°C
0
012345
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
6
1.8
1.6 VGS=10V ID=20A
1.4
1.2
1
VGS=4.5V ID=20A
0.8 0
25 50 75 100 125 150 175 200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
15 ID=20A
10 125°C.