INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
60V
RDS(on) (max)
1
IDSS (min) 600mA
Package SOT-89
Features
• De...
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
60V
RDS(on) (max)
1
IDSS (min) 600mA
Package SOT-89
Features
Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
Low On-Resistance: 1 max. at 25ºC
High Input Impedance
Low VGS(off) Voltage: -1.4 to -3.1V Small Package Size SOT-89
Applications
Ignition Modules Normally-On Switches Solid State Relays Converters Security Power Supplies
CPC3701
60V, Depletion-Mode, N-Channel Vertical DMOS FET
Description
The CPC3701 is an N-channel, depletion mode, field effect
transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 is a highly reliable FET device that has been used extensively in our Solid State Relays for industrial and security applications.
The CPC3701 has a minimum breakdown voltage of 60V, and is available in the SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information
Part # CPC3701CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel)
Package Pinout (SOT-89)
G D S
D
Circuit Symbol G
D S
DS-CPC3701-R06
www.ixysic.com
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INTEGRATED CIRCUITS DIVISION
CPC...