CPC3701

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 60V RDS(on) (max) 1 IDSS (min) 600mA Package SOT-89 Features Depletion Mode Device Offers Low RDS(on) at Cold Temperatures Low On-Resistance: 1 max. at 25ºC High Input Impedance Low VGS(off) Voltage: -1.4 to -3.1V Small Package Size SOT-89 Applications Ignition Modules Normally-On Switches Solid State Relays Converters Security Power Supplies CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET Description The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 is a highly reliable FET device that has been used extensively in our Solid State Relays for industrial and security applications. The CPC3701 has a minimum breakdown voltage of 60V, and is available in the SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3701CTR Description N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout (SOT-89) G D S D Circuit Symbol G D S DS-CPC3701-R06 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION CPC...