CPC3730C

BVDSX/ BVDGX 350V RDS(ON) (max) 30Ω IDSS (min) 140mA Package SOT-89 Features Depletion mode device offers low RDS(ON) at cold temperatures Low on resistance 30 ohms max. at 25ºC High input impedance High breakdown voltage 350V Low VGS(off) voltage -1.6 to -3.9V Small package size SOT-89 Applications Ignition modules Normally-on switches Solid state relays Converters Telecommunications Power supply Package Pinout G D S D (SOT-89) CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3730C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730C offers a low 30 ohm maximum on-state resistance at 25ºC. The CPC3730C has a minimum breakdown voltage of 350V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Informa...