N-Channel MOSFET
Data Sheet
4V Drive Nch MOSFET
RP1E090XN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-...
Description
Data Sheet
4V Drive Nch MOSFET
RP1E090XN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1E090XN
Taping TR 1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 9
IDP *1
36
IS 1.6
ISP *1
36
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit V V A A A A W C C
Inner circuit
(6) (5) (4)
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗2
∗1
(1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Thermal resistance Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 62.5
Unit C / W
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1/6
2011.02 - Rev.A
RP1E090XN
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage
IGSS V(BR)DSS
IDSS VGS (th)
Static drain-source on-state resistance
RDS
*
(on)
Forward transfer admittance Input capacitance Output capacit...
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