RP1H065SP

Data Sheet 4V Drive Pch MOSFET RP1H065SP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1H065SP Taping TR 1000  Absolute maximum ratings (Ta = 25˚C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Range of storage temperature Tstg Limits 45 20 6.5 26 1.6 26 2.0 150 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a) * Limits 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RP1H065SP Electrical characteristics (Ta = 25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse tr...