AON6702L

AON6702L 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6702L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2mΩ < 3mΩ 100% UIS Tested 100% Rg Tested Top View D DFN5X6 18 27 36 45 G SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 67 260 26 20 72 259 83 33 2.3 1.4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 1 Max Units 18 °C/W 55 °C/W 1.5 °C/W Rev 1: July 2009 www.aosmd.com This datasheet has been downloaded from http://www.digchip.com at this page Page 1 of 7 AON6702L Electrical Characteristics (TJ=25°C un...