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IXTH02N250 Dataheets PDF



Part Number IXTH02N250
Manufacturers IXYS
Logo IXYS
Description High Voltage Power MOSFETs
Datasheet IXTH02N250 DatasheetIXTH02N250 Datasheet (PDF)

High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 M.

  IXTH02N250   IXTH02N250


T720N IXTH02N250 IXTV02N250S


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