High Voltage Power MOSFETs
IXTH02N250 IXTV02N250S
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220
Maximum Ratings 2500 2500
V V
±20 V ±30 V
200 mA 600 mA
83 W
- 55 ... +150 150
- 55 ... +150
°C °C °C
300 260
1.13 / 10 11..65 / 25..14.6
°C °C Nm/lb.in N/lb.
6g 4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values Min. Typ. Max.
2500
V
2.5 4.5 V
±100 nA
5 μA 500 μA
450 Ω
G .