ZXM66N02N8

20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM66N02N8 SUMMARY (BR)DSS=20V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL ZXM66N02N8TA 13 12mm embossed 1000 units DEVICE MARKING ZXM6 6N02 SO8 S S S Top View 4 3 21 5 6 78 D D D DRAFT ISSUE A - AUGUST 2000 ADVANCED INFORMATION ZXM66N02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) (VGS=4.5V; TA=70°C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor VDSS VGS ID IDM IS ISM PD Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD Operating and Storage Temperature Range Tj:Tstg LIMIT 20 ±12 9.0 8.0 35 3.1 35 - - 2.5 20 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PA...