30V N-CHANNEL ENHANCEMENT MODE MOSFET
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66N03N8
SUMMARY (BR)DSS=30V; RDS(ON)=0.015
D=9A
DESCRIPTION
This new genera...
Description
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66N03N8
SUMMARY (BR)DSS=30V; RDS(ON)=0.015
D=9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM66N03N8TA
13 12mm embossed 1000 units
DEVICE MARKING ZXM6
6N03
SO8
S S S
Top View
4 3 21 5 6 78
D D D
DRAFT ISSUE A - AUGUST 2000 ADVANCED INFORMATION
ZXM66N03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (VGS=10V; TA=25°C)(b)(d) (VGS=10V; TA=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL VDSS VGS ID
IDM IS ISM PD
PD
PD
Tj:Tstg
LIMIT
30
±20 9.0 8.0
35
3.1
35
-
-
2.5 20
-55 to +150
UNIT V V A
A A A W mW/°C W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER
S...
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