Document
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance
l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065Ω@VGS = -4.5V
0.095Ω@VGS = -2.5V
ID
-5.1A
-4.1A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.
G
The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ, TSTG
Parameter Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
S FlipFET ISOMETRIC
Max. -20 ±5.1 ±3.5 ±35 2.2 1.4 17 ± 12 -55 to + 150
Units V
A
W mW/°C
V °C
Thermal Resistance
Symbol RθJA RθJ-PCB
www.irf.com
Parameter Junction-to-Ambient Junction-to-PCB mounted
Typ. 35
Max. 56.5 –––
Units °C/W
1
07/13/06
IRF6100
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
IDSS
Gate Threshold Voltage Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
-20 ––– ––– ––– -0.010 ––– ––– ––– 0.065 ––– 0.095 -0.45 ––– -1.2 9.8 ––– ––– ––– ––– -1.0 ––– ––– -25 ––– ––– 100 ––– ––– -100 ––– 14 21 ––– 1.9 2.9 ––– 5.0 7.5 ––– 12 ––– ––– 12 ––– ––– 50 ––– ––– 50 ––– ––– 1230 ––– ––– 250 ––– ––– 180 –––
V V/°C
Ω V S µA nA
nC
ns
pF
VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -5.1A VGS = -2.5V, ID = -4.1A VDS = VGS, ID = -250µA VDS = -10V, ID = -5.1A VDS = -20V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V ID = -5.1A VDS = -16V VGS = -5.0V VDD = -10V ID = -1.0A RG = 5.8Ω VGS = -4.5V VGS = 0V VDS = -15V ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge
Min.
––– ––– –––
Typ.
––– 48 34
Max.
-2.2
-33 -1.2 72 51
Units
A
V ns nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.2A, VGS = 0V TJ = 25°C, IF = -2.2A di/dt = 100A/µs
Notes: Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square 2oz copper on FR-4.
2 www.irf.com
-ID, Drain-to-Source Current (A)
100 10
VGS TOP -7.00V
-5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V
1
-1.00V
0.1
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
-ID, Drain-to-Source Current (A)
100 10
VGS TOP -7.00V
-5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V
IRF6100
1
-1.00V
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
-ID, Drain-to-Source Current (A)
100 TJ = 25°C TJ = 150° C
10
V DS = -15V 20µs PULSE WIDTH 1 1.0 1.5 2.0 2.5 3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = -5.1A 1.5
1.0
0.5
0.0 VGS = -4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF6100
C, Capacitance (pF)
2000 1600 1200
VGS = 0V, f = 1MHz
CCirssss
= =
CCggsd
+
Cgd ,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
800
400 0 1
Coss Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
-VGS , Gate-to-Source Voltage (V)
10 ID = .