DatasheetsPDF.com

IRF6100 Dataheets PDF



Part Number IRF6100
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF6100 DatasheetIRF6100 Datasheet (PDF)

l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the .

  IRF6100   IRF6100


Document
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. G The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipationƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range D S FlipFET™ ISOMETRIC Max. -20 ±5.1 ±3.5 ±35 2.2 1.4 17 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJA RθJ-PCB www.irf.com Parameter Junction-to-Ambientƒ Junction-to-PCB mounted Typ. 35 Max. 56.5 ––– Units °C/W 1 07/13/06 IRF6100 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance -20 ––– ––– ––– -0.010 ––– ––– ––– 0.065 ––– ––– 0.095 -0.45 ––– -1.2 9.8 ––– ––– ––– ––– -1.0 ––– ––– -25 ––– ––– 100 ––– ––– -100 ––– 14 21 ––– 1.9 2.9 ––– 5.0 7.5 ––– 12 ––– ––– 12 ––– ––– 50 ––– ––– 50 ––– ––– 1230 ––– ––– 250 ––– ––– 180 ––– V V/°C Ω V S µA nA nC ns pF VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -5.1A ‚ VGS = -2.5V, ID = -4.1A ‚ VDS = VGS, ID = -250µA VDS = -10V, ID = -5.1A VDS = -20V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V ID = -5.1A VDS = -16V VGS = -5.0V VDD = -10V ID = -1.0A RG = 5.8Ω VGS = -4.5V ‚ VGS = 0V VDS = -15V ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 48 34 Max. -2.2 -33 -1.2 72 51 Units A V ns nC Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = -2.2A, VGS = 0V ‚ TJ = 25°C, IF = -2.2A di/dt = 100A/µs ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. ƒ When mounted on 1 inch square 2oz copper on FR-4. 2 www.irf.com -ID, Drain-to-Source Current (A) 100 10 VGS TOP -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V 1 -1.00V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics -ID, Drain-to-Source Current (A) 100 10 VGS TOP -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V IRF6100 1 -1.00V 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics -ID, Drain-to-Source Current (A) 100 TJ = 25°C TJ = 150° C 10 V DS = -15V 20µs PULSE WIDTH 1 1.0 1.5 2.0 2.5 3.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -5.1A 1.5 1.0 0.5 0.0 VGS = -4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6100 C, Capacitance (pF) 2000 1600 1200 VGS = 0V, f = 1MHz CCirssss = = CCggsd + Cgd , Cds SHORTED Coss = Cds + Cgd Ciss 800 400 0 1 Coss Crss 10 100 -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -VGS , Gate-to-Source Voltage (V) 10 ID = .


ZXM66N03N8 IRF6100 ZX10-2-183


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)