HEXFET Power MOSFET
PRELIMINARY
l Advanced Process Technology l Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-...
Description
PRELIMINARY
l Advanced Process Technology l Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS VGSM
EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RqJC RqJA
Parameter Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -9.1676A
IRL3502S
H...
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