AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast...
Description
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax
G
PD - 94754
IRFR120Z IRFU120Z
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 190mΩ
ID = 8.7A
S
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D-Pak IRFR120Z
I-Pak IRFU120Z
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
Linear Derating Factor VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a ...
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