Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94798
IRL3714Z IRL3714ZS IR...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94798
IRL3714Z IRL3714ZS IRL3714ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 16m: 4.8nC
Benefits
l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3714Z
D2Pak IRL3714ZS
TO-262 IRL3714ZL
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount)
Notes through are on page 12 www.irf.com
Max. 20 ± 20
36g 25g
140 35 18 0.23 -55 to + 175
300 (1.6mm from case)
Typ. ––– 0.50 ––– –––
Max. 4.3 ––– 62 40
Units V A
W W/°C
°C
Units °C/W
1
10/8/03
IRL3714Z/ZS/ZL
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ IDSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Curre...
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