Document
DIGITAL AUDIO MOSFET
PD - 95850
IRLR9343
IRLU9343
Features l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved
Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for
Ruggedness l Repetitive Avalanche Capability for Robustness and
Reliability l Multiple Package Options
IRLU9343-701
Key Parameters
VDS -55
RDS(ON) typ. @ VGS = -10V
93
RDS(ON) typ. @ VGS = -4.5V
150
Qg typ.
31
TJ max
175
V m: m:
nC °C
D
G
D-Pak IRLR9343
I-Pak IRLU9343
I-Pak Leadform 701 S IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Clamping Pressure h
Thermal Resistance
Parameter
RθJC
Junction-to-Case g
RθJA Junction-to-Ambient (PCB Mounted) gj
RθJA Junction-to-Ambient (free air) g
Max. -55 ±20 -20 -14 -60 79 39
0.53 -40 to + 175
–––
Typ. ––– ––– –––
Max. 1.9 50 110
Units V A
W W/°C
°C N
Units °C/W
Notes through are on page 10 www.irf.com
1
4/1/04
IRLR/U9343 & IRLU9343-701
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -52 ––– mV/°C Reference to 25°C, ID = -1mA ––– 93 105 mΩ VGS = -10V, ID = -3.4A e
––– 150 170
VGS = -4.5V, ID = -2.7A e
-1.0 ––– ––– V VDS = VGS, ID = -250µA
––– -3.7 ––– mV/°C
IDSS
IGSS
gfs Qg Qgs Qgd Qgodr
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– ––– -2.0 µA VDS = -55V, VGS = 0V
––– ––– -25
VDS = -55V, VGS = 0V, TJ = 125°C
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
.