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IRLU9343-701 Dataheets PDF



Part Number IRLU9343-701
Manufacturers International Rectifier
Logo International Rectifier
Description Digital Audio MOSFET
Datasheet IRLU9343-701 DatasheetIRLU9343-701 Datasheet (PDF)

DIGITAL AUDIO MOSFET PD - 95850 IRLR9343 IRLU9343 Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options IRLU9343-701 Key Parameters VDS -55 RDS(ON) typ. @ VGS = -1.

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DIGITAL AUDIO MOSFET PD - 95850 IRLR9343 IRLU9343 Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options IRLU9343-701 Key Parameters VDS -55 RDS(ON) typ. @ VGS = -10V 93 RDS(ON) typ. @ VGS = -4.5V 150 Qg typ. 31 TJ max 175 V m: m: nC °C D G D-Pak IRLR9343 I-Pak IRLU9343 I-Pak Leadform 701 S IRLU9343-701 Refer to page 10 for package outline Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation PD @TC = 100°C Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Clamping Pressure h Thermal Resistance Parameter RθJC Junction-to-Case g RθJA Junction-to-Ambient (PCB Mounted) gj RθJA Junction-to-Ambient (free air) g Max. -55 ±20 -20 -14 -60 79 39 0.53 -40 to + 175 ––– Typ. ––– ––– ––– Max. 1.9 50 110 Units V A W W/°C °C N Units °C/W Notes  through ‰ are on page 10 www.irf.com 1 4/1/04 IRLR/U9343 & IRLU9343-701 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient -55 ––– ––– V VGS = 0V, ID = -250µA ––– -52 ––– mV/°C Reference to 25°C, ID = -1mA ––– 93 105 mΩ VGS = -10V, ID = -3.4A e ––– 150 170 VGS = -4.5V, ID = -2.7A e -1.0 ––– ––– V VDS = VGS, ID = -250µA ––– -3.7 ––– mV/°C IDSS IGSS gfs Qg Qgs Qgd Qgodr Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– ––– -2.0 µA VDS = -55V, VGS = 0V ––– ––– -25 VDS = -55V, VGS = 0V, TJ = 125°C ––– ––– -100 nA VGS = -20V ––– ––– 100 VGS = 20V .


IRLU9343 IRLU9343-701 IRF7834


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