Silicon N-Channel MOSFET
HAT2173N
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • Hig...
Description
HAT2173N
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 12.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S)
4(G)
2XXX
8(D)
7(D) 6(D) 5(D)
4 G
5678 DDDD
SSS 12 3
REJ03G1684-0100 Rev.1.00
May 28, 2008
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Symbol
VDSS
VGSS
ID ID(pulse) Note1
IDR IAP Note 2 EAR Note 2 Pch Note3
θch-C Tch
Tstg
Ratings 100 ±20 25 100 25 25 62.5 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 1 of 7
HAT2173N
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time ...
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