IRL3716LPbF

PD - 95448 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring l Lead-Free VDSS 20V IRL3716PbF IRL3716SPbF IRL3716LPbF HEXFET® Power MOSFET RDS(on) max 4.0mΩ ID 180A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3716 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range D2Pak IRL3716S Max. 20 ± 20 180† 130 720 210 100 1.4 -55 to + 175 TO-262 IRL3716L Units V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 0.72 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 6/22/04 IRL3716/3716S/3716LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) ID...