SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SB722
DESCRIPTION ·With T...
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower
Transistors
Product Specification
2SB722
DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation
APPLICATIONS ·For power amplifier applications
PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO
Collector-base voltage Collector-emitter voltage
Open emitter Open base
VEBO IC IB PC Tj
Emitter-base voltage
Open collector
Collector current
Base current
Collector power dissipation TC=25
Junction temperature
Tstg Storage temperature
VALUE -160 -160 -5 -15 -4 150 150
-55~200
UNIT V V V A A W
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
VBE Base-emitter on voltage ICBO Collector cut-off current
IC=-2A ; VCE=-5V VCB=-160V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-5V
Product Specification
2SB722
MIN TYP. MAX UNIT
-160
V
-160
V
-5 V
-3.0 V
-1.5 V
-0.1 mA
-0.1 mA
50
2
SavantIC Semiconductor
Silicon
PNP Power
Transistors
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