NTP10N40

NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Typical Applications Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous − Continuous @ 100°C − Single Pulse (tpv10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 400 400 "20 "40 10 7.5 35 142 1.14 Vdc Vdc Vdc Adc Watts W/°C Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 10 A, L = 10 mH, RG = 25 Ω) EAS 500 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1.) RθJC RθJA RθJA °C/W 0.88 62.5 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. When surface mounted to an FR4 board using the minimum recommended pad size. This document contains information on a new product. Specifications and information he...