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NTLUD4C26N

ON Semiconductor

Power MOSFET

NTLUD4C26N Power MOSFET 30 V, 7.3 A, Dual N−Channel, 2.0x2.0x0.55 mm mCoolt UDFN6 Package Features • UDFN Package with ...


ON Semiconductor

NTLUD4C26N

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Description
NTLUD4C26N Power MOSFET 30 V, 7.3 A, Dual N−Channel, 2.0x2.0x0.55 mm mCoolt UDFN6 Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Power Load Switch Wireless Charging DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Steady Current (Note 1) State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 30 ±12 7.3 5.3 9.1 1.70 V V A W t ≤ 5 s TA = 25°C Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C Power Dissipation (Note 2) TA = 25°C Pulsed Drain Current tp = 10 ms MOSFET Operating Junction and Storage Temperature Source Current (Body Diode) (Note 1) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ID PD IDM TJ, TSTG IS TL 2.63 4.8 3.4 0.72 22 -55 to 150 3.0 260 A W A °C A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommend...




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