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NTLUS3A39PZC Dataheets PDF



Part Number NTLUS3A39PZC
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTLUS3A39PZC DatasheetNTLUS3A39PZC Datasheet (PDF)

NTLUS3A39PZC Power MOSFET −20 V, −5.2 A, Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN mCoolt Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving • Ultra Low RDS(on) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Optimized for Power Management Applications for Portable Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and Others • Battery Switch •.

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NTLUS3A39PZC Power MOSFET −20 V, −5.2 A, Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN mCoolt Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving • Ultra Low RDS(on) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Optimized for Power Management Applications for Portable Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and Others • Battery Switch • High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.0 −5.2 −3.7 −6.4 1.5 V V A W Continuous Drain Current (Note 2) t≤5s Steady State TA = 25°C TA = 25°C TA = 85°C ID 2.3 −3.4 A −2.4 Power Dissipation (Note 2) TA = 25°C PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −1 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 0 1 http://onsemi.com V(BR)DSS −20 V MOSFET RDS(on) MAX 39 mW @ −4.5 V 50 mW @ −2.5 V 81 mW @ −1.8 V 147 mW @ −1.5 V ID MAX −5.2 A S G D P−Channel MOSFET MARKING DIAGRAM 1 6 UDFN6 (mCOOL]) CASE 517AU 1 AF MG G AF = Specific Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) PIN CONNECTIONS (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTLUS3A39PZC/D NTLUS3A39PZC THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ 5 s (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. Symbol RθJA RθJA RθJA Max Unit 85 55 °C/W 200 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/TJ VGS = 0 V, ID = −250 mA ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) IDSS IGSS VGS = 0 V, VDS = −20 V TJ = 25°C VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) Forward Transconductance gFS CHARGES, CAPACITANCES & GATE RESISTANCE VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −4.0 A VGS = −2.5 V, ID = −2.0 A VGS = −1.8 V, ID = −1.2 A VGS = −1.5 V, ID = −0.5 A VDS = −5 V, ID = −3.0 A Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) VGS = 0 V, f = 1 MHz, VDS = −15 V VGS = −4.5 V, VDS = −15 V; ID = −3.0 A Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf DRAIN-SOURCE DIODE CHARACTERISTICS VGS = −4.5 V, VDD = −15 V, ID = −3.0 A, RG = 1 W Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = −1.0 A TJ = 125°C Reverse Recovery Time tRR Charge Time Discharge Time ta VGS = 0 V, dis/dt = 100 A/ms, tb IS = −1.0 A Reverse Recovery Charge QRR 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. Min Typ Max Units −20 13 V mV/°C −1.0 mA ±10 mA −0.4 −1.0 V 3.0 mV/°C 30 39 mW 40 50 55 81 75 147 25 S 920 pF 85 80 10.4 nC 0.5 1.2 3.0 7.2 ns 12.2 34.7 34.8 0.67 1.0 0.56 11.1 5.8 5.3 4 V ns nC http://onsemi.com 2 −ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTLUS3A39PZC TYPICAL CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0.0 −4.5 to −3.5 V −3.0 V VGS = −2.5 V −2 V −1.8 V −1.5 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics 4.5 −ID, DRAIN CURRENT (A) 20 18 VDS ≤.


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