Document
NTLUS3A39PZC
Power MOSFET
−20 V, −5.2 A, Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN mCoolt Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving • Ultra Low RDS(on) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Optimized for Power Management Applications for Portable
Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and Others
• Battery Switch • High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Note 1) Continuous Drain Current (Note 1)
Steady State t≤5s
Power Dissipation (Note 1)
Steady State
TA = 25°C TA = 85°C TA = 25°C TA = 25°C
VDSS VGS ID
PD
−20 ±8.0 −5.2 −3.7 −6.4 1.5
V V A
W
Continuous Drain Current (Note 2)
t≤5s Steady State
TA = 25°C TA = 25°C TA = 85°C
ID
2.3 −3.4 A −2.4
Power Dissipation (Note 2)
TA = 25°C
PD
0.6 W
Pulsed Drain Current
tp = 10 ms
IDM
−17 A
Operating Junction and Storage Temperature
TJ, TSTG
-55 to 150
°C
Source Current (Body Diode) (Note 2)
IS −1 A
Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1
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V(BR)DSS −20 V
MOSFET RDS(on) MAX 39 mW @ −4.5 V 50 mW @ −2.5 V 81 mW @ −1.8 V 147 mW @ −1.5 V
ID MAX −5.2 A
S
G
D
P−Channel MOSFET
MARKING DIAGRAM
1
6
UDFN6
(mCOOL]) CASE 517AU
1
AF MG G
AF = Specific Device Code M = Date Code G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number: NTLUS3A39PZC/D
NTLUS3A39PZC
THERMAL RESISTANCE RATINGS Parameter
Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ 5 s (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
Symbol RθJA RθJA RθJA
Max Unit 85 55 °C/W 200
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA ID = −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5)
IDSS IGSS
VGS = 0 V, VDS = −20 V
TJ = 25°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance
VGS(TH) VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −4.0 A VGS = −2.5 V, ID = −2.0 A VGS = −1.8 V, ID = −1.2 A VGS = −1.5 V, ID = −0.5 A VDS = −5 V, ID = −3.0 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
VGS = 0 V, f = 1 MHz, VDS = −15 V
VGS = −4.5 V, VDS = −15 V; ID = −3.0 A
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −15 V, ID = −3.0 A, RG = 1 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −1.0 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time Discharge Time
ta VGS = 0 V, dis/dt = 100 A/ms, tb IS = −1.0 A
Reverse Recovery Charge
QRR
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max
Units
−20 13
V mV/°C
−1.0 mA
±10 mA
−0.4
−1.0
V
3.0 mV/°C
30 39
mW
40 50
55 81
75 147
25 S
920 pF 85 80 10.4 nC 0.5 1.2 3.0
7.2 ns 12.2 34.7 34.8
0.67 1.0 0.56 11.1 5.8 5.3
4
V ns
nC
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−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTLUS3A39PZC
TYPICAL CHARACTERISTICS
20 18 16 14 12 10
8 6 4 2 0
0.0
−4.5 to −3.5 V −3.0 V VGS = −2.5 V
−2 V −1.8 V
−1.5 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics
4.5
−ID, DRAIN CURRENT (A)
20 18 VDS ≤.