NTMS4P01R2

NTMS4P01R2 Power MOSFET −4.5 Amps, −12 Volts P−Channel Enhancement−Mode Single SO−8 Package Features High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency Miniature SO−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Mounting Information for the SO−8 Package is Provided Applications Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS Please See the Table on the Following Page http://onsemi.com VDSS −12 V RDS(ON) TYP 30 mΩ @ −4.5 V ID MAX −4.5 A Single P−Channel D G S 8 1 SO−8 CASE 751 STYLE 13 MARKING DIAGRAM & PIN ASSIGNMENT N.C. 1 2 Source 3 Source 4 Gate E4P01 LYWW 8 Drain 7 Drain 6 Drain 5 Drain Top View E4P01 L Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping NTMS4P01R2 SO−8 2500/Tape & Reel © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 Publication Order Number: NTMS4P01R2/D NTMS4P01R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage VDSS Drain−to−Gate Voltage (RGS = 1.0 mW) VDGR Gate−to−Source Voltage − Continuous VGS Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ ...