NTR5105P

NTR5105P Power MOSFET −60 V, −211 mA, Single P−Channel SOT−23 Package Features Trench Technology These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Small Signal Load Switch Analog Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID PD −60 ±20 −196 −141 −211 −152 347 V V mA mW t≤5s 403 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM −784 A TJ, −55 to °C Tstg 150 IS −347 mA TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 360 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 310 °C/W 1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu area − 1.127 in. sq. [2 oz.] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu pad. http://onsemi.com V(BR)DSS −60 V RDS(on) MAX 5 W @ −10 V 6 W @ −4.5 V ID MAX −211 mA...