NTTD2P02R2

NTTD2P02R2 Power MOSFET −2.4 Amps, −20 Volts Dual P−Channel Micro8 Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Thermal Resistance − Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Operating and Storage Temperature Range VDSS VGS RθJA PD ID ID IDM RθJA PD ID ID IDM TJ, Tstg −20 "8.0 V V 160 0.78 −2.4 −1.92 −20 °C/W W A A A 88 1.42 −3.25 −2.6 −30 −55 to +150 °C/W W A A A °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −5.0 Apk, L = 28 mH, RG = 25 Ω) Maximum Lead Temperature for Soldering Purposes for 10 seconds EAS TL 350 mJ 260 °C 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), S...