NVMFD5875NL

NVMFD5875NL MOSFET – Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 mW, 22 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5875NLWF − Wettable Flanks Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- TC = 25°C ID rent RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 22 A 15 32 W 16 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C 7 A 5.8 3.2 W 2.2 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 80 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain− to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, RG = 25 W) (IL(pk) = 14.5 A, L = 0.1 mH) (IL(pk) = 6.3 A, L = 2 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 19 A EAS 10.5 mJ 40 TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may b...