IRL3303PBF

Lead-Free PD - 94887 IRL3303PbF HEXFET Power MOSFET www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF D.U.T + ‚ -  RG Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance ƒ Ground Plane Low Leakage Inductance Current Transformer - - „+ dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRL3303PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4 6.10 (.240) 1 23 1.15 (.045) MIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M ...