IRFR3706PbF

PD - 95097A SMPS MOSFET IRFR3706PbF IRFU3706PbF Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.0mΩ ID 75A„ Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3706 I-Pak IRFU3706 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 75 „ 53 „ 280 88 44 0.59 -55 to + 175 Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case… Junction-to-Ambient (PCB mount)*… Junction-to-Ambient… Typ. ––– ––– ––– * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Max. 1.7 50 110 Units V V A W W mW/°C °C Units °C/W Notes  through … are on page 10 www.irf.com 1 12/14/04 IRFR/U3706PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Volt...