IRFU12N25DPbF

PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 250V RDS(on) max 0.26Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRFR12N25D IRFU12N25D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Notes  through … are on page 10 www.irf.com Max. 14 9.7 56 144 0.96 ± 30 9.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typ. ––– ––– ––– Max. 1.04 50 110 Units °C/W 1 12/2/04 IRFR/U12N25DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source...