Document
FDC699P
January 2004
FDC699P
P-Channel 2.5V PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Applications
• Battery management • Load Switch • Battery protection
Features
• –7 A, –20 V
RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
G S S
SuperSOT-6TM FLMP
S S S
16 25 34
Bottom Drain
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.699
FDC699P
7’’
Ratings
–20 ±12 –7 –40
2 1.5 –55 to +150
60 111 0.5
Tape width 8mm
2004 Fairchild Semiconductor Corporation
Units
V V A W °C
°C/W
Quantity 3000 units
FDC699P Rev C2 (W)
FDC699P
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS ∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = –250 µA
ID = – 250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
–20
–12
V mV/°C –1 µA
IGSS Gate–Body Leakage
VGS = ±12 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
–0.6
ID = – 250 µA, Referenced to 25°C
–0.9 3
–1.5
V mV/°C
VGS = –4.5 V, ID = –7 A VGS = –2.5 V, ID = –6 A VGS = –4.5 V, ID = –7 A, TJ =125°C
VDS = –5 V, ID = –7 A
14 22 mΩ 21 30 17 31
30 S
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance
VDS = – 10 V, V GS = 0 V, f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
2640 560 280 3.6
pF pF pF
Ω
Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V, ID = –7 A, VGS = –5 V
16 28 11 19 75 120 41 65 27 38 5 7
ns ns ns ns nC nC nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –1.6 A (Not.