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FDC699P Dataheets PDF



Part Number FDC699P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel 2.5V PowerTrench MOSFET
Datasheet FDC699P DatasheetFDC699P Datasheet (PDF)

FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Battery management • Load Switch • Battery protection Features • –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V • High performance trenc.

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FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Battery management • Load Switch • Battery protection Features • –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V • High performance trench technology for extremely low RDS(ON) • Fast switching speed • FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size .699 FDC699P 7’’ Ratings –20 ±12 –7 –40 2 1.5 –55 to +150 60 111 0.5 Tape width 8mm 2004 Fairchild Semiconductor Corporation Units V V A W °C °C/W Quantity 3000 units FDC699P Rev C2 (W) FDC699P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = –250 µA ID = – 250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –20 –12 V mV/°C –1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = –250 µA –0.6 ID = – 250 µA, Referenced to 25°C –0.9 3 –1.5 V mV/°C VGS = –4.5 V, ID = –7 A VGS = –2.5 V, ID = –6 A VGS = –4.5 V, ID = –7 A, TJ =125°C VDS = –5 V, ID = –7 A 14 22 mΩ 21 30 17 31 30 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = – 10 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 2640 560 280 3.6 pF pF pF Ω Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω VDS = –10 V, ID = –7 A, VGS = –5 V 16 28 11 19 75 120 41 65 27 38 5 7 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.6 A (Not.


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