FDS7082N3

FDS7082N3 February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters. Applications Secondary side Synchronous rectifier Synchronous Buck VRM and POL Converters Features 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low Qg and Rg for fast switching FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline. Bottom-side 5 Drain Contact 6 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS7082N3 FDS7082N3 13’’ 2004 Fairchild Semiconductor Corporation Ratings 30 ±20 17.5 60...