IRF7471PbF

PD- 95726 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS 40V l Lead-Free IRF7471PbF HEXFET® Power MOSFET RDS(on) max 13mΩ ID 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 8 www.irf.com Max. 40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Typ. ––– ––– Max. 20 50 Units °C/W 1 8/11/04 IRF7471PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) ––– Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 1.0 IDSS Drain-to-Source Leakage Current ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse...