FDJ1032C

FDJ1032C Complementary PowerTrench® MOSFET F FDJ1032C Complementary PowerTrench® MOSFET June 2008 Features ■ Q1 –2.8 A, –20 V. ■ Q2 3.2 A, 20 V. ■ Low gate charge RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size ■ RoHS Compliant General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications ■ DC/DC converter ■ Load switch ■ Motor Driving S2 S1 G1 G2 S2 S1 Bottom Drain Contact 43 Q2 (N) 52 61 Q1 (P) Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) Q1 Q2 –20 20 ±8 ±12 –2.8 3.2 –12 12 1.5...