PowerTrench MOSFET. FDJ1032C Datasheet

FDJ1032C Datasheet PDF, Equivalent


Part Number

FDJ1032C

Description

Complementary PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDJ1032C Datasheet PDF


FDJ1032C Datasheet
F
FDJ1032C
Complementary PowerTrench® MOSFET
June 2008
Features
Q1 –2.8 A, –20 V.
Q2 3.2 A, 20 V.
Low gate charge
RDS(ON) = 160 m@ VGS = –4.5 V
RDS(ON) = 230 m@ VGS = –2.5 V
RDS(ON) = 390 m@ VGS = –1.8 V
RDS(ON) = 90 m@ VGS = 4.5 V
RDS(ON) = 130 m@ VGS = 2.5 V
High performance trench technology for extremely low
RDS(ON)
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
RoHS Compliant
General Description
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Applications
DC/DC converter
Load switch
Motor Driving
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
43
Q2 (N)
52
61
Q1 (P)
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Q1 Q2
–20 20
±8 ±12
–2.8 3.2
–12 12
1.5
0.9
–55 to +150
80
5
Units
V
V
A
W
°C
°C/W
©2008 Fairchild Semiconductor Corporation
FDJ1032C Rev. B2(W)
1
www.fairchildsemi.com

FDJ1032C Datasheet
Package Marking and Ordering Information
Device Marking
.H
Device
FDJ1032C
Reel Size
7"
Tape width
8mm
Quantity
3000 units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = –250 µA
VGS = 0 V, ID = 250 µA
BVDSS
TJ
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = ±8 V, VDS = 0 V
VGS = ±12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = –250 µA
VDS = VGS, ID = 250 µA
ID = –250 µA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –2.8 A
VGS = –2.5 V, ID = –2.2 A
VGS = –1.8 V, ID = –1.7 A
VGS = –4.5 V, ID =2.8A, TJ = 125°C
VGS = 4.5 V, ID = 3.2 A
VGS = 2.5 V, ID = 2.7 A
VGS = 4.5 V, ID = 3.2, TJ = 125°C
VDS = –5 V, ID = – 2.8 A
VDS = 5 V, ID = 3.2 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1:
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Q2:
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance
VGS =
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Q1:
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
Q2:
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6
Type Min Typ Max Units
Q1 –20
Q2 20
V
Q1 –13 mV/°C
Q2 13
Q1 –1 µA
Q2 1
Q1 ±100 nA
Q2 ±100
Q1 –0.4 –0.8 –1.5
Q2 0.6 1.0 1.5
V
Q1 3 mV/°C
Q2 –3
Q1 108 160 m
163 230
283 390
150 238
Q2 70 90
100 130
83 132
Q1 5
Q2 7.5
S
Q1 290 pF
Q2 200
Q1 55 pF
Q2 50
Q1 29 pF
Q2 30
Q1 14
Q2 3
Q1 8 16 ns
Q2 7 14
Q1
13 23
ns
Q2 8 16
Q1
13 23
ns
Q2 11 20
Q1
18 32
ns
Q2 2 4
FDJ1032C Rev. B2(W)
2
www.fairchildsemi.com


Features Datasheet pdf FDJ1032C Complementary PowerTrench® MOS FET F FDJ1032C Complementary PowerTre nch® MOSFET June 2008 Features ■ Q1 –2.8 A, –20 V. ■ Q2 3.2 A, 20 V. ■ Low gate charge RDS(ON) = 160 m Ω @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ High performance trench technolo gy for extremely low RDS(ON) ■ FLMP S C75 package: Enhanced thermal performan ce in industry-standard package size RoHS Compliant General Description These N & P-Channel MOSFETs are produce d using Fairchild Semiconductor’s adv anced PowerTrench process that has been especially tailored to minimize on-sta te resistance and yet maintain superior switching performance. These devices a re well suited for low voltage and batt ery powered applications where low in-l ine power loss and fast switching are r equired. Applications ■ DC/DC conver ter ■ Load switch ■ Motor Driving S2 S1 G1 G2 S2 S1 Bottom Drain Contact 43 Q2 (N) 52 61 Q1 (P) Bot.
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