L11398

IFEATURES GHigh optical power: QCW 100 W/bar GHigh stability GLong life GCompact IAPPLICATIONS GMeasuring instrument GPumping source for solid state laser GIR illumination for surveillance GHeat treatment High-Power QCW Laser Diode Stack Module L11398 Series ISPECIFICATIONS QCW operation (Max. duty ratio is 1 % (200 µs, 50 Hz)) [Top(hs) = 25 °C] Parameter Symbol Conditions Value L11398-16P808 L11398-16P940 L11398-16P980 Unit Peak emission wavelength λp Φep = 1.6 kW Tolerance of λp — Φep = 1.6 kW Spectral radiation bandwidth ∆λ FWHM Radiant output power Φep Duty to 1 % If = 100 A Duty to 1 % If = 105 A Forward voltage Vf Beam spread Parallel (slow) angle Vertical (fast) θ// θ⊥ FWHM Lasing threshold current Ith Duty to 1 % Expected life time — tw = 200 µs 808 — 1.6 23 940 ±5 4 1.6 — <32 <10 <40 15 1.0 × 109 980 nm nm nm 1.6 — kW V ° (degree) 15 A shot * Max. No. of Stack 16 * Stack pitch 0.4 mm ICOOLING CONDITIONS AND SURROUNDINGS Parameter Coolant Operating case temperature Storage temperature Description / Value Passive cooling (Heat conductive cooling) +5 to +35 -20 to +40 Unit — °C °C Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K. High-Power QCW Laser Diode Stack Module L11398 Series ...