High-Power QCW Laser Diode Stack Module
IFEATURES
GHigh optical power: QCW 100 W/bar GHigh stability GLong life GCompact
IAPPLICATIONS
GMeasuring instrument GPu...
Description
IFEATURES
GHigh optical power: QCW 100 W/bar GHigh stability GLong life GCompact
IAPPLICATIONS
GMeasuring instrument GPumping source for solid state laser GIR illumination for surveillance GHeat treatment
High-Power QCW Laser Diode Stack Module
L11398 Series
ISPECIFICATIONS
QCW operation (Max. duty ratio is 1 % (200 µs, 50 Hz))
[Top(hs) = 25 °C]
Parameter
Symbol
Conditions
Value L11398-16P808 L11398-16P940 L11398-16P980
Unit
Peak emission wavelength
λp
Φep = 1.6 kW
Tolerance of λp
— Φep = 1.6 kW
Spectral radiation bandwidth
∆λ
FWHM
Radiant output power
Φep
Duty to 1 % If = 100 A Duty to 1 % If = 105 A
Forward voltage
Vf
Beam spread Parallel (slow)
angle
Vertical (fast)
θ// θ⊥
FWHM
Lasing threshold current Ith Duty to 1 %
Expected life time
— tw = 200 µs
808 — 1.6
23
940 ±5 4 1.6 — <32 <10 <40 15 1.0 × 109
980 nm
nm
nm
1.6 —
kW
V
° (degree)
15 A shot
* Max. No. of Stack 16 * Stack pitch 0.4 mm
ICOOLING CONDITIONS AND SURROUNDINGS
Parameter Coolant Operating case temperature Storage temperature
Description / Value Passive cooling (Heat conductive cooling)
+5 to +35 -20 to +40
Unit — °C °C
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.
High-Power QCW Laser Diode Stack Module L11398 Series
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