SSF2160G4

Main Product Characteristics VDSS 20V RDS(on) 28mohm(typ.) ID 4.5A SOT23-3 Features and Benefits  Advanced trench MOSFET process technology  Special designed for buttery protection, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2160G4 20V N-Channel MOSFET 21S6205G4 Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. Absolute Max Rating Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 20 ±10 4.5 18 1.1 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 110 ℃/W www.godark.com Page 1 of 8 Rev.1.0 SSF2160G4 20V N-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Symbol BV...