N-Channel PowerTrench MOSFET
FDP120AN15A0 / FDD120AN15A0
September 2002
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ
...
Description
FDP120AN15A0 / FDD120AN15A0
September 2002
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ
Features
rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A Qg(tot) = 11.2nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82845
Applications
DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems
DRAIN (FLANGE)
SOURCE DRAIN GATE
GATE SOURCE
DRAIN (FLANGE)
TO-220AB FDP SERIES
TO-252AA FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 52oC/W Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA RθJA
Thermal Resistance Junction to Case TO-252, TO-220 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-220 (Note 2) Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings 150 ±20
14 9.7 2.8 Figure 4 122 65 0.43 -55 to 175
2.31 100 62...
Similar Datasheet