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FDD120AN15A0

Fairchild Semiconductor

N-Channel PowerTrench MOSFET

FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ ...


Fairchild Semiconductor

FDD120AN15A0

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Description
FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ Features rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A Qg(tot) = 11.2nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82845 Applications DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) TO-220AB FDP SERIES TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 52oC/W Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-220 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-220 (Note 2) Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area D G S Ratings 150 ±20 14 9.7 2.8 Figure 4 122 65 0.43 -55 to 175 2.31 100 62...




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