FDD120AN15A0 MOSFET Datasheet

FDD120AN15A0 Datasheet, PDF, Equivalent


Part Number

FDD120AN15A0

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
Datasheet
Download FDD120AN15A0 Datasheet


FDD120AN15A0
September 2002
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench® MOSFET
150V, 14A, 120m
Features
• rDS(ON) = 101m(Typ.), VGS = 10V, ID = 4A
• Qg(tot) = 11.2nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82845
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 52oC/W
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-220
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-220 (Note 2)
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
150
±20
14
9.7
2.8
Figure 4
122
65
0.43
-55 to 175
2.31
100
62
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B

FDD120AN15A0
Package Marking and Ordering Information
Device Marking
FDD120AN15A0
FDP120AN15A0
Device
FDD120AN15A0
FDP120AN15A0
Package
TO-252AA
TO-220AB
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 120V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 4A, VGS = 10V
ID = 2A, VGS = 6V
ID = 4A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V
ID = 4A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 75V, ID = 4A
VGS = 10V, RGS = 24
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 27mH, IAS = 3A.
2: Pulse width = 100s.
ISD = 4A
ISD = 2A
ISD = 4A, dISD/dt = 100A/µs
ISD = 4A, dISD/dt = 100A/µs
Min Typ Max Units
150 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.101 0.120
- 0.113 0.170
- 0.235 0.282
- 770 -
pF
- 85 - pF
- 17 - pF
11.2 14.5 nC
- 1.4 1.8 nC
- 3.5 - nC
- 2.1 - nC
- 2.6 - nC
- - 33 ns
- 6 - ns
- 16 - ns
- 30 - ns
- 19 - ns
- - 74 ns
-
-
1.25
V
- - 1.0 V
- - 61 ns
- - 109 nC
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B


Features FDP120AN15A0 / FDD120AN15A0 September 2 002 FDP120AN15A0 / FDD120AN15A0 N-Chan nel PowerTrench® MOSFET 150V, 14A, 120 mΩ Features • rDS(ON) = 101mΩ (T yp.), VGS = 10V, ID = 4A • Qg(tot) = 11.2nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Forme rly developmental type 82845 Applicati ons • DC/DC Converters and Off-line U PS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchrono us Rectifier • Direct Injection / Die sel Injection Systems • 42V Automotiv e Load Control • Electronic Valve Tra in Systems DRAIN (FLANGE) SOURCE DRAI N GATE GATE SOURCE DRAIN (FLANGE) TO -220AB FDP SERIES TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unle ss otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Volta ge Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, .
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