FDD6606

FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications DC/DC converter Motor Drives Features 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V Low gate charge Fast switching High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 75 100 71 3.8 1.6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.1 40 96 Package Marking and Ordering Information Device Marking Device Package FDD6606 FDD6606 D-PAK (TO-252) Reel Size 13’’ Tape width 12mm Units V A W °C °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6606 Rev B (W) FDD6606 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise...