FDD6606 MOSFET Datasheet

FDD6606 Datasheet, PDF, Equivalent


Part Number

FDD6606

Description

30V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download FDD6606 Datasheet


FDD6606
February 2004
FDD6606
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
DC/DC converter
Motor Drives
Features
75 A, 30 V
RDS(ON) = 6 m@ VGS = 10 V
RDS(ON) = 8 m@ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
75
100
71
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6606
FDD6606
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6606 Rev B (W)

FDD6606
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = ± 20 V,
VGS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 17 A
VGS = 4.5 V, ID = 15 A
VGS = 10 V, ID = 17 A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 17 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 5 V
ID = 17 A,
30
1
50
Typ
20
1.9
–7
5
6
8
65
2400
577
258
1.4
14
12
38
18
24
10
11
Max
240
17
10
±100
3
6.0
8.0
11.9
20
37
64
32
31
Units
mJ
A
V
mV/°C
µA
nA
V
mV/°C
m
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
FDD6606 Rev B (W)


Features FDD6606 February 2004 FDD6606 30V N-Ch annel PowerTrench MOSFET General De scription This N-Channel MOSFET has bee n designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventiona l switching PWM controllers. It has bee n optimized for low gate charge, low RD S( ON) and fast switching speed. Applic ations • DC/DC converter • Motor Dr ives Features • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V • Low gate charge Fast switching • High performance trench technology for extremely low RDS (ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unle ss otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gat e-Source Voltage Drain Current – Cont inuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) ( Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temper ature Range Ratings 30 ± 20 75 100 71 3.8 1.6 –55 to +175 Thermal Characteristics R.
Keywords FDD6606, datasheet, pdf, Fairchild Semiconductor, 30V, N-Channel, PowerTrench, MOSFET, DD6606, D6606, 6606, FDD660, FDD66, FDD6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)