FDD8882

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET March 2015 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ Features ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability „ RoHS Complicant Application ! DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semiconductor Corporation 1 FDD8882/FDU8882 Rev. 1.2 www.fairchildsemi.com FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 55 50 12.6 Figure 4 41 55 0.37 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-252, TO-251 2.73 RθJA Thermal Resistance...