Document
FDS7098N3
May 2004
FDS7098N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 14 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7098N3
FDS7098N3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30 ±20 14 60 3.0 1.5 –55 to +150
40 0.5
Tape width 12mm
Units
V V A
W °C
°C/W
Quantity 2500 units
FDS7098N3 Rev C (W)
FDS7098N3
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS ∆TJ
IDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
30
V 27 mV/°C
10 ±100
µA nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14 A,TJ = 125°C
VDS = 10 V, ID = 14 A
1
1.9 3
V
–6 mV/°C
7.5 9 mΩ 9.5 12 11 14
62 S
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
1587 385 154 1.4
pF pF pF
Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
VDS = 15 V, VGS = 5.0 V
ID = 14 A,
11 20
ns
13 23 ns
27 43
ns
15 27 ns
16 22 nC
5 nC
6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
tRR Reverse Recovery Time QRR Reverse Recovery Charge
IF = 14 A, diF/dt = 100 A/µs
(Note 2)
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
2.5 16 26
0.7 1.2
A ns nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) 85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7098N3 Rev C (W)
FDS7098N3
Typical Characteristics
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
60 VGS =10V 6.0V
50
4.5V
3.5V
40
30
20 3.0V
10
0 0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
Figure 1. On-Region Characteristics.
1.6 ID = 14A VGS = 10V
1.4
1.2
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation withTemperature.
70 VDS = 5V
60
50
40 TA =125oC
30
20 25oC
10
0 1.5
-55oC
2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
IS, REVERSE DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2
1.8 VGS = 3.5V
1.6
1.4 4.0V 4.5V
1.2 5.0V 6.0V
1 10V
0.8 0
10 20 30 40 50 60 ID, DRAIN CURRENT (A)
RDS(ON), ON-RESISTANCE (OHM)
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.022 0.02
0.018 0.016 0.014 0.012
0.01 0.008 0.006
2
ID = 7A
TA = 125oC
TA = 25oC 468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V
10
1 0.1 0.01 0.001
TA = 125oC
25oC
-55oC
0.0001 0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
ID, DRAIN CURRENT (A)
FDS7098N3 Rev C (W)
FDS7098N3
Typical Characteristics
VGS, GATE-.