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FDS7098N3 Dataheets PDF



Part Number FDS7098N3
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDS7098N3 DatasheetFDS7098N3 Datasheet (PDF)

FDS7098N3 May 2004 FDS7098N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 14 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • High per.

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FDS7098N3 May 2004 FDS7098N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 14 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 6 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS7098N3 FDS7098N3 13’’ 2004 Fairchild Semiconductor Corporation Ratings 30 ±20 14 60 3.0 1.5 –55 to +150 40 0.5 Tape width 12mm Units V V A W °C °C/W Quantity 2500 units FDS7098N3 Rev C (W) FDS7098N3 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 30 V 27 mV/°C 10 ±100 µA nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14 A,TJ = 125°C VDS = 10 V, ID = 14 A 1 1.9 3 V –6 mV/°C 7.5 9 mΩ 9.5 12 11 14 62 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz 1587 385 154 1.4 pF pF pF Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 5.0 V ID = 14 A, 11 20 ns 13 23 ns 27 43 ns 15 27 ns 16 22 nC 5 nC 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current tRR Reverse Recovery Time QRR Reverse Recovery Charge IF = 14 A, diF/dt = 100 A/µs (Note 2) VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 2.5 16 26 0.7 1.2 A ns nC V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7098N3 Rev C (W) FDS7098N3 Typical Characteristics ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 VGS =10V 6.0V 50 4.5V 3.5V 40 30 20 3.0V 10 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 Figure 1. On-Region Characteristics. 1.6 ID = 14A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation withTemperature. 70 VDS = 5V 60 50 40 TA =125oC 30 20 25oC 10 0 1.5 -55oC 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. IS, REVERSE DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 VGS = 3.5V 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 1 10V 0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) RDS(ON), ON-RESISTANCE (OHM) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 2 ID = 7A TA = 125oC TA = 25oC 468 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 TA = 125oC 25oC -55oC 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. ID, DRAIN CURRENT (A) FDS7098N3 Rev C (W) FDS7098N3 Typical Characteristics VGS, GATE-.


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