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FDJ127P Dataheets PDF



Part Number FDJ127P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel -1.8 Vgs Specified PowerTrench MOSFET
Datasheet FDJ127P DatasheetFDJ127P Datasheet (PDF)

FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.8 V • Low gate charge • High performance trench technology for extreme.

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FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD TJ, TSTG Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .C FDJ127P 7’’ Bottom Drain 4 5 6 Ratings –20 ±8 –4.1 –16 1.6 –55 to +150 77 Tape width 8mm 3 2 1 Units V V A W °C °C/W Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDJ127P Rev B2 (W) FDJ127P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 8 V, VGS = –8 V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C VGS = –4.5 V, ID = –4.1 A VGS = –2.5 V, ID = –3.5 A VGS = –1.8 V, ID = –2.7 A VGS = –4.5 V, ID = –4.1,TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –4.1 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω VDS = –10 V, ID = –4.1 A, VGS = –4.5 V Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.5 A (Note 2) –20 –0.4 –16 V –12 mV/°C –1 100 –100 µA nA nA –0.8 –1.5 V 3 mV/°C 42 60 mΩ 61 85 97 133 60 A 10 S 780 pF 120 pF 60 pF 10 20 9 10 27 43 11 20 7.2 10 1.7 1.5 ns ns ns ns nC nC nC –2.5 –0.8 –1.2 A V Notes: 1. RθJA is the s.


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