Document
FDJ127P
July 2004
FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench MOSFET
General Description
This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Applications
• Battery management • Load switch
Features
• –4.1 A, –20 V.
RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package
G S S
SC75-6 FLMP
SSS
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD TJ, TSTG
Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.C
FDJ127P
7’’
Bottom Drain
4 5 6
Ratings
–20 ±8 –4.1 –16 1.6 –55 to +150
77
Tape width 8mm
3 2 1
Units
V V A W °C
°C/W
Quantity 3000 units
2004 Fairchild Semiconductor Corporation
FDJ127P Rev B2 (W)
FDJ127P
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS ∆TJ
IDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 8 V, VGS = –8 V,
VGS = 0 V VDS = 0 V VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –4.1 A VGS = –2.5 V, ID = –3.5 A VGS = –1.8 V, ID = –2.7 A VGS = –4.5 V, ID = –4.1,TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –4.1 A
Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V, f = 1.0 MHz
Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V, ID = –4.1 A, VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –2.5 A (Note 2)
–20 –0.4 –16
V –12 mV/°C
–1 100 –100
µA nA nA
–0.8 –1.5
V
3 mV/°C
42 60 mΩ 61 85 97 133 60
A
10 S
780 pF 120 pF 60 pF
10 20 9 10 27 43 11 20 7.2 10 1.7 1.5
ns ns ns ns nC nC nC
–2.5 –0.8 –1.2
A V
Notes:
1. RθJA is the s.