MTD20N03HDL

MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 30 Drain−Gate Voltage (RGS = 1.0 MW) VDGR 30 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ±15 ± 20 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) ID 20 ID 16 IDM 60 Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 2) PD 74 0.6 1.75 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk W W/°C °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (...