MTD2N40E

MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 400 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 400 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous @ TC = 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) ID ID IDM 2.0 1.5 6.0 Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, ...