Document
NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Power Dissipation – RqJC Steady State, TC = 25°C Pulsed Drain Current Continuous Source Current (Body Diode)
VDSS VGS ID
ID
PD
IDM IS
400 ±20 1.7 0.4
V V A
1.1 0.25 A
39 2.0 W
6.9 1.6 1.7 0.4
A A
Single Pulse Drain−to−Source Avalanche Energy, ID = 1 A
Maximum Temperature for Soldering Leads
EAS TL
120 mJ 260 °C
Operating Junction and Storage Temperature
TJ, TSTG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. IS = 1.7 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDD02N40
Junction−to−Ambient Steady State NDD02N40 (Note 4)
NDD02N40−1 (Note 3) NDT02N40 (Note 4) NDT02N40 (Note 5)
RqJC RqJA
3.2 °C/W
°C/W 39 96 62 151
3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces) 5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 4
1
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V(BR)DSS 400 V
RDS(ON) MAX 5.5 W @ 10 V
N−Channel MOSFET D (2)
G (1)
S (3)
MARKING DIAGRAMS
4 Drain
12 3
YWW 2N 40G
4 DPAK CASE 369C
(Surface Mount) STYLE 2
1 Gate
2 Drain
3 Source
4
Drain 4
IPAK
YWW 2N 40G
CASE 369D
(Straight Lead)
1 2 3
Y WW 2N40
STYLE 2
= Year = Work Week = Device Code
12 3 Gate Drain Source
G = Pb−Free Package
1 23 A Y W 2N40
Drain
4 SOT−223
4
CASE 318E
STYLE 3
AYW
2N40G
= Assembly Location
G
= Year
12 3
= Work Week = Specific Device Code
Gate Drain Source
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
Publication Order Number: NDD02N40/D
NDD02N40, NDT02N40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 1 mA
400
V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient
Reference to 25°C, ID = 1 mA
460 mV/°C
Drain−to−Source Leakage Current
IDSS
VDS = 400 V, VGS = 0 V TJ = 25°C
1 mA
TJ = 125°C
50
Gate−to−Source Leakage Current
IGSS
VGS = ±20 V
±10 mA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VDS = VGS, ID = 250 mA Reference to 25°C, ID = 50 mA
0.8 1.6 4.6
2V mV/°C
Static Drain-to-Source On Resistance Forward Transconductance DYNAMIC CHARACTERISTICS
RDS(on) gFS
VGS = 10 V, ID = 0.22 A VDS = 15 V, ID = 0.22 A
4.5 5.5 W 1.1 S
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance (Note 7)
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
121 pF 16 3
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain (“Miller”) Charge (Note 7)
Qg
Qgs Qgd VDS = 200 V, ID = 1.7 A, VGS = 10 V
5.5 nC 0.8 1.0
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS (Note 8)
3.1 V 8.7 W
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
VDD = 200 V, ID = 1.7 A, VGS = 10 V, RG = 0 W
5 ns 7 14 4
Diode Forward Voltage
VSD TJ = 25°C
IS = 1.7 A, VGS = 0 V
TJ = 100°C
0.9 1.6 V 0.8
Reverse Recovery Time
trr
146 ns
Charge Time Discharge Time
ta VGS = 0 V, VDD = 30 V, IS = 1.7 A, tb di/dt = 100 A/ms
37 109
Reverse Recovery Charge
Qrr
260 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 7. Guaranteed by design. 8. Switching characteristics are independent of operating junction temperatures.
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NDD02N40, NDT02N40
ORDERING INFORMATION Device
Package
Shipping†
NDD02N40−1G
IPAK (Pb−Free, Halogen Free)
75 Units / Rail
NDD02N40T4G
DPAK (Pb−Free, Halogen Free)
2500 / Tape & Reel
NDT02N40T1G
SOT−223 (Pb−Free, Halogen Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Bro.