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NDD02N40 Dataheets PDF



Part Number NDD02N40
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NDD02N40 DatasheetNDD02N40 Datasheet (PDF)

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Power Dissipation – RqJC Steady State, TC = 25°C Pulsed Drain Current.

  NDD02N40   NDD02N40


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NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Power Dissipation – RqJC Steady State, TC = 25°C Pulsed Drain Current Continuous Source Current (Body Diode) VDSS VGS ID ID PD IDM IS 400 ±20 1.7 0.4 V V A 1.1 0.25 A 39 2.0 W 6.9 1.6 1.7 0.4 A A Single Pulse Drain−to−Source Avalanche Energy, ID = 1 A Maximum Temperature for Soldering Leads EAS TL 120 mJ 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. IS = 1.7 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDD02N40 Junction−to−Ambient Steady State NDD02N40 (Note 4) NDD02N40−1 (Note 3) NDT02N40 (Note 4) NDT02N40 (Note 5) RqJC RqJA 3.2 °C/W °C/W 39 96 62 151 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [2 oz] including traces) 5. Surface−mounted on FR4 board using minimum recommended pad size (Cu area = 0.026” sq. [2 oz]). © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 4 1 http://onsemi.com V(BR)DSS 400 V RDS(ON) MAX 5.5 W @ 10 V N−Channel MOSFET D (2) G (1) S (3) MARKING DIAGRAMS 4 Drain 12 3 YWW 2N 40G 4 DPAK CASE 369C (Surface Mount) STYLE 2 1 Gate 2 Drain 3 Source 4 Drain 4 IPAK YWW 2N 40G CASE 369D (Straight Lead) 1 2 3 Y WW 2N40 STYLE 2 = Year = Work Week = Device Code 12 3 Gate Drain Source G = Pb−Free Package 1 23 A Y W 2N40 Drain 4 SOT−223 4 CASE 318E STYLE 3 AYW 2N40G = Assembly Location G = Year 12 3 = Work Week = Specific Device Code Gate Drain Source G = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: NDD02N40/D NDD02N40, NDT02N40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 400 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient Reference to 25°C, ID = 1 mA 460 mV/°C Drain−to−Source Leakage Current IDSS VDS = 400 V, VGS = 0 V TJ = 25°C 1 mA TJ = 125°C 50 Gate−to−Source Leakage Current IGSS VGS = ±20 V ±10 mA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VDS = VGS, ID = 250 mA Reference to 25°C, ID = 50 mA 0.8 1.6 4.6 2V mV/°C Static Drain-to-Source On Resistance Forward Transconductance DYNAMIC CHARACTERISTICS RDS(on) gFS VGS = 10 V, ID = 0.22 A VDS = 15 V, ID = 0.22 A 4.5 5.5 W 1.1 S Input Capacitance (Note 7) Output Capacitance (Note 7) Reverse Transfer Capacitance (Note 7) Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 121 pF 16 3 Total Gate Charge (Note 7) Gate-to-Source Charge (Note 7) Gate-to-Drain (“Miller”) Charge (Note 7) Qg Qgs Qgd VDS = 200 V, ID = 1.7 A, VGS = 10 V 5.5 nC 0.8 1.0 Plateau Voltage VGP Gate Resistance Rg RESISTIVE SWITCHING CHARACTERISTICS (Note 8) 3.1 V 8.7 W Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time tf SOURCE−DRAIN DIODE CHARACTERISTICS VDD = 200 V, ID = 1.7 A, VGS = 10 V, RG = 0 W 5 ns 7 14 4 Diode Forward Voltage VSD TJ = 25°C IS = 1.7 A, VGS = 0 V TJ = 100°C 0.9 1.6 V 0.8 Reverse Recovery Time trr 146 ns Charge Time Discharge Time ta VGS = 0 V, VDD = 30 V, IS = 1.7 A, tb di/dt = 100 A/ms 37 109 Reverse Recovery Charge Qrr 260 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 7. Guaranteed by design. 8. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NDD02N40, NDT02N40 ORDERING INFORMATION Device Package Shipping† NDD02N40−1G IPAK (Pb−Free, Halogen Free) 75 Units / Rail NDD02N40T4G DPAK (Pb−Free, Halogen Free) 2500 / Tape & Reel NDT02N40T1G SOT−223 (Pb−Free, Halogen Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Bro.


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