NDT02N40

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Power Dissipation – RqJC Steady State, TC = 25°C Pulsed Drain Current Continuous Source Current (Body Diode) VDSS VGS ID ID PD IDM IS 400 ±20 1.7 0.4 V V A 1.1 0.25 A 39 2.0 W 6.9 1.6 1.7 0.4 A A Single Pulse Drain−to−Source Avalanche Energy, ID = 1 A Maximum Temperature for Soldering Leads EAS TL 120 mJ 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. IS = 1.7 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDD02N40 Junction−to−Ambient Steady State NDD02N40 (Note 4) NDD02N40−1 (Note 3) NDT02N40 (Note 4) NDT02N40 (Note 5) RqJC RqJA 3.2 °C/W °C/W 39 96 62 151 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [2 oz] including traces) 5. S...